the information provided herein is believed to be reliable at press time. sirenza microdevices assumes no responsibility for in accuracies or ommisions. sirenza microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at t he user?s own risk. prices and specifications are subject to change without notice. no patent rights or licenses to any of the circuits described herein are implied or granted to any third party. sirenza microdevices does not authorize or warrant any sirenza microdevices product for use in life-support devices and/or systems. copyright 2002 sirenza microdevices, inc. all worldwide rights reserved. 303 south technology court broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 1 eds-103989 rev d preliminary sirenza microdevices? sza-3044 is a high linearity class ab heterojunction bipolar transistor (hbt) amplifier housed in a low-cost surface-mountable plastic package. this hbt amplifier is made with in gap on gaas device technology and fabricated with mocvd for an ideal combination of low cost and high reliability. this product is specifically designed as a final or driver stage for 802.16 equipment in the 3.3-3.8 ghz bands. it can run from a 3v to 6v supply. optimized on-chip impedance matc hing circuitry provides a 50 ? nominal rf input impedance. the external output match and bias adjustability a llows load line optimization for other applications or over narrower bands. it features an output power detector, on/off power control and high rf overdrive robustness. this pro duct is available in a rohs compliant and green package with matte tin finish, desig- nated by the ?z? package suffix. key specifications symbol parameters: test conditions, app circuit page 6 z 0 = 50 ? , v cc = 5.0v, iq = 220ma, t bp = 30oc unit min. typ. max. f o frequency of operation mhz 2700 3800 p 1db output power at 1db compression ? 3.3ghz dbm 29.5 31.0 output power at 1db compression ? 3.6ghz 28.5 30.0 s 21 small signal gain ? 3.4ghz db 23 25 27 small signal gain ? 3.6ghz 22 24 26 pout output power at 2.5% evm 802.11a 54mb/s - 3.4ghz dbm 24 im3 third order suppression (pout=20dbm per tone) - 3.6ghz dbc -40 -37 nf noise figure at 3.6 ghz db 5.0 irl worst case input return loss 3.3-3.8ghz db 12 15 orl worst case output return loss 3.3-3.6ghz 7 10 vdet range output voltage range for pout=+15dbm to +30dbm v 0.9 to 2.1 i cq quiescent current (v cc = 5v) ma 185 220 255 i vpc power up control current, vpc=5v, ( i vpc1 + i vpc2 ) ma 2.7 i leak off vcc leakage current vpc=0v ua 10 100 r th, j-l thermal resistance (junction - lead) oc/w 22 functional block diagram sza-3044 / sza-3044z 2.7-3.8ghz 5v 1w power amplifier product features applications ? p1db = 31dbm @ 5v ? 802.11a 54mb/s 2.5% evm performance pout = 24dbm, vcc=5v, 340ma, pae 14.5% pout = 25dbm, vcc=6v, 365ma, pae 14.5% ? on-chip output power detector ? robust - survives rf input power = +15dbm ? on chip esd protection class 2 (2000v) ? power up/down control < 1 s ? pin compatible with sza-2044 and sza-5044 ? 802.16 wimax driver or output stage ? fixed wireless, wll product description 4mm x 4mm qfn package rfin rfout vcc power detector vout active bias active bias power up/dow n control pb rohs compliant & package green
303 south technology court broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 2 eds-103989 rev d preliminary sza-3044 2.7-3.8 ghz 5v power amp pin out description pin # function description 1,2,4,5,7, 9,11,13,1 5,17,19 n/c these are unused pins and not wired inside the packag e. they may be grounded or connected to adjacent pins. 6vpc1 vpc1 is the bias control pin for the stage 1 active bias ci rcuit. an external series resistor is required for proper setting of bias levels. refer to the evaluation board sche matic for resistor value. to prevent potential damage, do not apply voltage to this pin that is +1v greater than voltage applied to pin 20 (vbias) unless vpc supply current capability is less than 10 ma. 8vpc2 vpc2 is the bias control pin for the stage 2 active bias ci rcuit. an external series resistor is required for proper setting of bias levels. refer to the evaluation board sche matic for resistor value. to prevent potential damage, do not apply voltage to this pin that is +1v greater than voltage applied to pin 20 (vbias) unless vpc supply current capability is less than 10 ma. 10 vdet output power detector voltage. load with > 10k ohms for best performance 3 rfin rf input pin. this is dc grounded internal to the ic. do not apply voltage to this pin. 12,14 rfout rf output pin. this is also another connection to the 2nd stage collector. 16 vc2 2nd stage collector bias pin. apply 3.0 to 5.0v to this pin. 18 vc1 1st stage collector bias pin. apply 3.0 to 5.0v to this pin. 20 vbias active bias network vcc. apply 3.0 to 5.0v to this pin. epad gnd exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for opti- mum thermal and rf performance. several vias should be located under the epad as shown in the recom- mended land pattern (page 5). caution: esd sensitive appropriate precaution in handling, packaging and testing devices must be observed. absolute maximum ratings parameters value unit vc2 collector bias current (i vc2 ) 600 ma vc1 collector bias current (i vc1 ) 300 ma device voltage (v d )7.0v power dissipation 3.5 w operating lead temperature (t l ) -40 to +85 oc max rf input power for 50 ohm output load 15 dbm max rf input power for 10:1 vswr rf out load 8dbm storage temperature range -40 to +150 oc operating junction temperature (t j ) +150 oc esd human body model 2000 v operation of this device beyond any one of these limits may cause permanent damage. for reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d < (t j - t l ) / r th? j-l simplified device schematic stage 1 bias stage 2 bias pin 3 pin 12, 14 pin 20 pin 6 pin 18 pin 8 pin 16 pin 10 epad epad
303 south technology court broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 3 eds-103989 rev d preliminary sza-3044 2.7-3.8 ghz 5v power amp typical performance, 3.4- 3.7ghz application circuit (vcc=5v, icq=360ma, 802.11a 54mb/s 64qam)* parameter units 3.4ghz 3.5ghz 3.6ghz 3.7ghz 3.8ghz gain @ pout=24dbm db - - 24.5 24.2 23.6 22.7 21.5 p1db dbm - - 31.5 31.5 31.0 31.0 30.0 pout @ 2.5% evm* dbm - - 23.5 23.5 24.0 23.5 23.0 i @ pout 2.5% evm* ma - - 445 450 450 450 433 typical performance, 3.2- 3.6ghz 6v application circuit (vcc=6 v, icq=220ma, 802.11a 54mb/s 64qam)* parameter units 3.3ghz 3.4ghz 3.5ghz 3.6ghz 3.7ghz gain @ pout=24dbm db - 25.6 25.6 25.1 24.1 23.2 - p1db dbm - 32.5 32.0 32.0 31.5 31.5 - pout @ 2.5% evm* dbm - 25 25 25 24.5 24.5 - i @ pout 2.5% evm* ma - 370 365 363 356 355 - typical performance, 3.2- 3.6ghz application circuit (vcc=5v, icq=220ma, 802.11a 54mb/s 64qam)* parameter units 3.2ghz 3.3ghz 3.4ghz 3.5ghz 3.6ghz 3.7ghz gain @ pout=24dbm db 25.7 25.6 25.5 25.2 24.3 23.4 - p1db dbm 31.0 31.0 30.5 30.0 30.0 29.5 - pout @ 2.5% evm* dbm 23. 5 24.0 24.0 23.5 23.0 23.0 - i @ pout 2.5% evm* ma 331 340 339 330 327 325 - typical performance, 2.7-3.0ghz application circ uit (vcc=5v, icq=360ma, 802.11a 54mb/s 64qam)* parameter units 2.7ghz 2.8ghz 2.9ghz 3.0ghz gain @ pout=24dbm db 25.3 25.3 25.3 25.2 - - - p1db dbm 31 31 31 31 - - - pout @ 2.5% evm* dbm 23 23.5 23.5 23.5 - - - i @ pout 2.5% evm* ma 438 453 450 444 - - - * see 3.0-3.6ghz applic ation circuit, pg. 7. * contact applications engineering for details about application circuit. * contact applications engineering for details about application circuit. * optimized for maximum pout @ 2.5% evm over 3.4-3. 7ghz band. same application circuit from rev. b datasheet. contact applicat ions engineering for details.
303 south technology court broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 4 eds-103989 rev d preliminary sza-3044 2.7-3.8 ghz 5v power amp measured 3.2 - 3.6 ghz app lication circuit data (v cc = v pc = 5.0v, i q = 220ma, t=25c) evm vs pout, f=3.4ghz 802.11g, ofdm, 54mb/s, 64qam 0 1 2 3 4 5 6 10 12 14 16 18 20 22 24 26 pout(dbm) evm(%) -40c -20c 0c +25c +70c +85c evm vs pout, f=3.6ghz 802.11g, ofdm, 54mb/s, 64qam 0 1 2 3 4 5 6 10 12 14 16 18 20 22 24 26 pout(dbm) evm(%) -40c -20c 0c +25c +70c +85c evm vs pout, f=3.3ghz 802.11g, ofdm, 54mb/s, 64qam 0 1 2 3 4 5 6 10 12 14 16 18 20 22 24 26 pout(dbm) evm(%) -40c -20c 0c +25c +70c +85c im3 vs pout (2 tone avg.), t=25c tone spacing=1mhz -60 -55 -50 -45 -40 -35 -30 12 14 16 18 20 22 24 26 28 pout(dbm) im3(dbc) 3.3ghz 3.4ghz 3.6ghz gain vs pout, t=25c 22 23 24 25 26 27 28 12 14 16 18 20 22 24 26 28 30 32 pout(dbm) gain(db) 3.3ghz 3.4ghz 3.6ghz gain vs pout f=3.4ghz 22 23 24 25 26 27 28 12 14 16 18 20 22 24 26 28 30 32 pout(dbm) gain(db) -40c -20c 0c +25c +70c +85c
303 south technology court broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 5 eds-103989 rev d preliminary sza-3044 2.7-3.8 ghz 5v power amp measured 3.2 - 3.6 ghz app lication circuit data (v cc = v pc = 5.0v, i q = 220ma, t=25c) narrowband s11 - input return loss -30 -25 -20 -15 -10 3.3 3.4 3.5 3.6 3.7 3.8 frequency(ghz) s11(db) -40c -20c 0c +25c +70c +85c narrowband s12 - reverse isolation -70 -65 -60 -55 -50 -45 -40 -35 -30 3.3 3.4 3.5 3.6 3.7 3.8 frequency(ghz) s12(db) -40c -20c 0c +25c +70c +85c narrowband s21 - forward gain 20 22 24 26 28 30 3.3 3.4 3.5 3.6 3.7 3.8 frequency(ghz) s21(db) -40c -20c 0c +25c +70c +85c narrowband s22 - output return loss -15 -10 -5 0 3.3 3.4 3.5 3.6 3.7 3.8 frequency(ghz) s22(db) -40c -20c 0c +25c +70c +85c dc supply current (idc) vs pout, t=25c 0.2 0.3 0.4 0.5 0.6 0.7 11 13 15 17 19 21 23 25 27 29 31 pout(dbm) idc(a) 3.3ghz 3.4ghz 3.6ghz noise figure (nf) vs frequency 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 3.3 3.4 3.5 3.6 3.7 3.8 frequency(ghz) nf(db) -40c +25c +85c
303 south technology court broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 6 eds-103989 rev d preliminary sza-3044 2.7-3.8 ghz 5v power amp measured 3.2 - 3.6 ghz app lication circuit data (v cc = v pc = 5.0v, i q = 220ma, t=25c) broadband s11 - input return loss -25 -20 -15 -10 -5 0 0123456 frequency(ghz) s11(db) -40c -20c 0c +25c +70c +85c broadband s12 - reverse isolation -80 -70 -60 -50 -40 -30 -20 -10 0 0123456 frequency(ghz) s12(db) -40c -20c 0c +25c +70c +85c broadband s21 - forward gain 0 5 10 15 20 25 30 0123456 frequency(ghz) s21(db) -40c -20c 0c +25c +70c +85c broadband s22 - output return loss -15 -10 -5 0 0123456 frequency(ghz) s22(db) -40c -20c 0c +25c +70c +85c rf power detector (vdet) vs pout, t=25c 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 11 13 15 17 19 21 23 25 27 29 31 pout(dbm) vdet(v) 3.3ghz 3.4ghz 3.6ghz rf power detector (vdet) vs pout f=3.4ghz 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 11 13 15 17 19 21 23 25 27 29 31 pout(dbm) vdet(v) -40c -20c 0c +25c +70c +85c
303 south technology court broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 7 eds-103989 rev d preliminary sza-3044 2.7-3.8 ghz 5v power amp r4 r1 r2 SZA3044 c4 r3 c6 c3 c1 c5 r5 c2 c 7 3.2-3.6 ghz application circuit for vcc = v+ = vpc = 5.0v 3.2-3.6 ghz evaluation board layout for vcc = v+ = vpc = 5.0v board material getek, 10mil thick, dk=3.9, 2 oz. copper note: r5 jumper is required to achieve specified performance. do not omit. it provides 0.6nh of inductance.
303 south technology court broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 8 eds-103989 rev d preliminary sza-3044 2.7-3.8 ghz 5v power amp package outline drawing (dimensions in mm): refe r to package outlline drawing for more detail. lot id SZA3044 sza-3044 - 85/15 sn/pb plating sza-3044z - matte sn plating part number ordering information part number reel size devices/reel sza-3044 13? 3000 sza-3044z 13? 3000 part symbolization the part will be symbolized with an ?sza-3044? for sn/pb plating or ?sza-3044z? for rohs green compli- ant product. marking designator will be on the top sur- face of the package. recommended land pattern (dimensions in mm[in]): recommended pcb solderm ask (smobc) for landing pattern (dimensions in mm[in]):
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